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| PHOTOMULTIPLIER TUBE R7154 High Sensitivity Solar Blind Photocathode (160 nm to 320 nm) 28 mm (1-1/8 Inch) Diameter, 9-Stage, Side-On Type FEATURES GSpectral Response .................................. 160 nm to 320 nm GCathode Sensitivity Radiant at 254 nm ..................................... 62 mA/W Typ. Quantum Efficiency at 254 nm ........................ 30 % Typ. GAnode Sensitivity (at 1000 V) Radiant at 254 nm ............................ 6.2 x 105 A/W Typ. APPLICATIONS GEmission Spectroscopy GUV Spectrophotometers SPECIFICATIONS GENERAL Parameter Description/Value 160 to 320 Spectral Response 254 Wavelength of Maximum Response MateriaI Cs-Te Photocathode Minimum Effective Area 8 x 24 Quartz Window Material Secondary Emitting Surface Sb-Cs Structure Circular-cage Dynode Number of Stages 9 4 Direct Interelectrode Anode to Last Dynode 6 Anode to All Other Electrodes Capacitances Base 11-pin base JEDEC No. B11-88 Weight Approx. 45 Operating Ambient Temperature -30 to +50 Storage Temperature -30 to +50 SuitabIe Socket E678-11A (Sold Separately) E717-63 (Sold Separately) SuitabIe Socket Assembly E717-74 (Sold Separately) Unit nm nm -- mm -- -- -- -- pF pF -- g C C -- -- Figure 1: Typical Spectral Response TPMSB0128EA 100 CATHODE RADIANT SENSITIVITY (mA/W) QUANTUM EFFICIENCY (%) CATHODE RADIANT SENSITIVITY 10 1 QUANTUM EFFICIENCY 0.1 0.01 100 200 300 400 500 WAVELENGTH (nm) Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. (c)2006 Hamamatsu Photonics K.K. PHOTOMULTIPLIER TUBES R7154 MAXIMUM RATINGS (Absolute Maximum Values) Parameter Between Anode and Cathode Supply Voltage Between Anode and Last Dynode Average Anode Current A Value 1250 250 0.1 Unit V V mA CHARACTERISTlCS (at 25 C) Cathode Sensitivity Parameter Quantum Efficiency at 254 nm Radiant at 254 nm Radiant at 254 nm Min. -- -- 1.0 x 105 -- -- -- -- -- -- -- -- Typ. 30 62 6.2 x 105 1.0 x 107 1 9.1 x 10-17 2.2 22 1.2 0.1 1.0 Max. -- -- -- -- 10 -- -- -- -- -- -- Unit % mA/W A/W -- nA W ns ns ns % % Anode Sensitivity Gain Anode Dark Current F (After 30 min Storage in Darkness) ENI (Equivalent Noise Input) G Anode Pulse Rise Time H E Time Response Electron Transit Time I Transit Time Spread (TTS) J Light Hysteresis Anode Current Stability K Voltage Hysteresis NOTES A: Averaged over any interval of 30 seconds maximum. B: The light source is a tungsten filament lamp operated at a distribution temperature of 2856K. Supply voltage is 100 V between the cathode and all other electrodes connected together as anode. C: Red/White ratio is the quotient of the cathode current measured using a red filter (Toshiba R-68) interposed between the light source and the tube by the cathode current measured with the filter removed under the same conditions as Note B. D: The value is cathode output current when a blue filter (Corning CS 5-58 polished to 1/2 stock thickness) is interposed between the light source and the tube under the same condition as Note B. E: Measured with the same light source as Note B and with the voltage distribution ratio shown in Table 1 below. Table 1: Voltage Distribution Ratio Electrode Distribution Ratio K 1 Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 1 1 1 1 1 1 1 1 1 P H: The rise time is the time for the output pulse to rise from 10 % to 90 % of the peak amplitude when the entire photocathode is illuminated by a delta function light pulse. I: The electron transit time is the interval between the arrival of delta function light pulse at the entrance window of the tube and the time when the anode output reaches the peak amplitude. In measurement, the whole photocathode is illuminated. J: Also called transit time jitter. This is the fluctuation in electron transit time between individual pulses in the signal photoelectron mode, and may be defined as the FWHM of the frequency distribution of electron transit times. K: Hysteresis is temporary instability in anode current after light and voltage are applied. ANODE CURRENT li l max. l min. TIME 0 5 6 7 (minutes) TPMSB0002EA Hysteresis = lmax. li lmin. SuppIy Voltage: 1000 V, K: Cathode, Dy: Dynode, P: Anode x 100 (%) F: Measured with the same supply voltage and voltage distribution ratio as Note E after removal of light. G:ENI is an indication of the photon-limited signal-to-noise ratio. It refers to the amount of light in watts to produce a signal-to-noise ratio of unity in the output of a photomultiplier tube. ENI = where 2q.ldb.G.f S q = Electronic charge (1.60 x 10-19 coulomb). ldb = Anode dark current (after 30 minute storage) in amperes. G = Gain. f = Bandwidth of the system in hertz. 1 hertz is used. S = Anode radiant sensitivity in amperes per watt at the wavelength of peak response. (1) Light Hysteresis The tube is operated at 750 V with an anode current of 1 A for 5 minutes. The light is then removed from the tube for a minute. The tube is then re-illuminated by the previous light level for a minute to measure the variation. (2) Voltage Hysteresis The tube is operated at 300 V with an anode current of 0.1 A for 5 minutes. The light is then removed from the tube and the supply voltage is quickly increased to 800 V. After a minute, the supply voltage is then reduced to the previous value and the tube is re-illuminated for a minute to measure the variation. Figure 2: Anode Radiant Sensitivity and Gain Characteristcs 108 TPMSB0129EB Figure 3: Typical Time Response 108 100 80 TPMSB0004EC TYPICAL GAIN 60 107 40 ANODE RADIANT SENSITIVITY (A/IW) 107 TRANS 106 106 20 IT TIME 105 TYPICAL ANODE SENSITIVITY 104 MINIMUM ANODE SENSITIVITY 103 105 TIME (ns) GAIN 10 8 6 104 4 RISE T 103 2 IME 102 500 700 1000 102 1500 1 500 700 1000 1500 SUPPLY VOLTAGE (V) SUPPLY VOLTAGE (V) PHOTOMULTIPLIER TUBES R7154 Figure 4: Dimensional Outline and Basing Diagram (Unit: mm) 28.5 1.5 T9 BULB 8 MIN. Figure 5: Socket (Unit: mm) E678-11A 49 38 Sold Separately PHOTOCATHODE DY5 24 MIN. DY4 4 80 MAX. DY3 3 94 MAX. DY2 2 1 5 DY6 6 9 DY9 10 P 11 K 29 5 49.0 0.25 DY1 DIRECTION OF LIGHT Bottom View (Basing Diagram) 32.2 0.5 11 PIN BASE JEDEC No.B11-88 TACCA0064EA TPMSA0005EB Figure 6: D Type Socket Assembly (Unit: mm) Sold Separately E717-63 E717-74 HOUSING (INSULATOR) SOCKET PIN No. 10 P R10 DY9 38.0 0.3 49.0 0.3 29.0 0.3 4 DY8 DY7 DY6 DY5 0.7 30.0 +0 -1 31.0 0.5 HOUSING (INSULATOR) POTTING COMPOUND DY4 DY3 DY2 DY1 K 9 R9 8 R8 7 R7 2 18 4 3.5 8 DY8 5 33.0 0.3 3.5 PMT C3 C2 C1 SIGNAL GND SIGNAL OUTPUT RG-174/U(BLACK) POWER SUPPLY GND AWG22 (BLACK) PMT 32.00.5 26.00.2 SOCKET PIN No. 10 SIGNAL OUTPUT (A) GND (G) R10 C3 C2 C1 P DY9 26.00.2 32.00.5 TOP VIEW 14.00.5 33 7 DY7 9 R9 8 R8 7 R7 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11 -HV (K) R1 to R10 : 330 k C1 to C3 : 10 nF DY8 DY7 DY6 DY5 DY4 DY3 DY2 0.7 DY1 K 6 R6 5 R5 4 R4 3 R3 2 R2 1 R1 11 R1 to R10 : 330 k C1 to C3 : 10 nF 7 A G 2.7 22.40.2 SIDE VIEW K 450 10 10 -HV AWG22 (VIOLET) 30 R13 4- 2.8 * "Wiring diagram applies when -HV is supplied." To supply +HV,connect the pin "G" to+HV, and the pin "K" to the GND. BOTTOM VIEW TACCA0002EH TACCA0277EA * Hamamatsu also provides C4900 series compact high voltage power supplies and C6270 series DP type socket assemblies which incorporate a DC to DC converter type high voltage power supply. Warning-Personal Safety Hazards Electrical Shock-Operating voltages applied to this device present a shock hazard. WEB SITE www.hamamatsu.com HAMAMATSU PHOTONICS K.K., Electron Tube Division 314-5, Shimokanzo, Iwata City, Shizuoka Pref., 438-0193, Japan, Telephone: (81)539/62-5248, Fax: (81)539/62-2205 U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P. O. Box 6910, Bridgewater. N.J. 08807-0910, U.S.A., Telephone: (1)908-231-0960, Fax: (1)908-231-1218 E-mail: usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49)8152-375-0, Fax: (49)8152-2658 E-mail: info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: (33)1 69 53 71 00, Fax: (33)1 69 53 71 10 E-mail: infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road Welwyn Garden City Hertfordshire AL7 1BW, United Kingdom, Telephone: 44-(0)1707-294888, Fax: 44(0)1707-325777 E-mail: info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Smidesvagen 12, SE-171-41 SOLNA, Sweden, Telephone: (46)8-509-031-00, Fax: (46)8-509-031-01 E-mail: info@hamamatsu.se Italy: Hamamatsu Photonics Italia: S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39)02-935 81 733, Fax: (39)02-935 81 741 E-mail: info@hamamatsu.it TPMS1036E02 JUL. 2006. 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